skip to main content

Explore Research Products in the NSF-PAR

  • Home
  • Search Results
  • Page 1 of 1

Search for: All records

Creators/Authors contains: "LeBeau, J. M."

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. ; ; ; ; ; ; ; ; ; ; et al ( , Physical review letters)
    We report charge transfer and built-in electric fields across the epitaxial SrNbxTi1−xO3−δ=Sið001Þ interface. Electrical transport measurements indicate the formation of a hole gas in the Si and the presence of built-in fields. Hard x-ray photoelectron measurements reveal pronounced asymmetries in core-level spectra that arise from these built-in fields. Theoretical analysis of core-level spectra enables built-in fields and the resulting band bending to be spatially mapped across the heterojunction. The demonstration of tunable charge transfer, built-in fields, and the spatial mapping of the latter, lays the groundwork for the development of electrically coupled, functional heterojunctions. 
    more » « less
    Full Text Available 
  2. ; ; ; ; ; ; ; ; ; ; et al ( , Physical Review Letters)
  3. ; ; ; ; ; ; ; ; ; ; et al ( , Journal of Physics: Condensed Matter)
  4. ; ; ; ; ; ; ; ; ( , Journal of Applied Physics)